FBG10N05ASH
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FBG10N05ASH
Product_Category
Single FETs, MOSFETs
Manufacturer
EPC Space
Type
GAN FET HEMT 100V 5A 4FSMD-A
Encapsulation
Packages
Bulk
RoHS
NO
Price
$392.7500
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Specifications
PDF(1)
TYPEDESCRIPTION
MfrEPC Space
SerieseGaN®
PackageBulk
Product StatusACTIVE
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Rds On (Max) @ Id, Vgs45mOhm @ 5A, 5V
Vgs(th) (Max) @ Id2.5V @ 1.2mA
Supplier Device Package4-SMD
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)+6V, -4V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds233 pF @ 50 V
2.090231s