FBG20N04ASH
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FBG20N04ASH
Product_Category
Single FETs, MOSFETs
Manufacturer
EPC Space
Type
GAN FET HEMT 200V 4A 4FSMD-A
Encapsulation
Packages
Bulk
RoHS
NO
Price
$392.7500
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Specifications
PDF(1)
TYPEDESCRIPTION
MfrEPC Space
Seriese-GaN®
PackageBulk
Product StatusACTIVE
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Rds On (Max) @ Id, Vgs130mOhm @ 4A, 5V
Vgs(th) (Max) @ Id2.8V @ 1mA
Supplier Device Package4-SMD
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)+6V, -4V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 100 V
1.901734s